Laser Action of Trions in a Semiconductor Quantum Well

J. Puls, G. V. Mikhailov, F. Henneberger, D. R. Yakovlev, A. Waag, and W. Faschinger
Phys. Rev. Lett. 89, 287402 – Published 30 December 2002

Abstract

We report on the observation of optical gain and lasing at the trion transition of n-doped ZnSe quantum wells. Specifically, the (stimulated) emission-absorption net rate of this transition is controlled by the difference of trion and electron occupation in momentum space. As the mass of the trion is larger than that of the electron, gain occurs on the low-energy side of the line center without degeneracy and inversion in the total particle numbers. The scenario is reminiscent of a three-level system. At higher injection levels, carrier heating sets on and limits the available gain to values of about 104   cm1.

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  • Received 4 September 2001

DOI:https://doi.org/10.1103/PhysRevLett.89.287402

©2002 American Physical Society

Authors & Affiliations

J. Puls1, G. V. Mikhailov2, F. Henneberger1, D. R. Yakovlev2,3, A. Waag4, and W. Faschinger5

  • 1Institut für Physik der Humboldt–Universität zu Berlin, 10115 Berlin, Germany
  • 2A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
  • 3Experimentelle Physik 2, Universität Dortmund, 44221 Dortmund, Germany
  • 4Abteilung Halbleiterphysik, Universität Ulm, 89081 Ulm, Germany
  • 5Physikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany

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Issue

Vol. 89, Iss. 28 — 31 December 2002

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