Comment on “Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers”

S. V. Kravchenko, A. A. Shashkin, and V. T. Dolgopolov
Phys. Rev. Lett. 89, 219701 – Published 4 November 2002

Abstract

A Comment on the Letter by V. M. Pudalov et al., Phys. Rev. Lett. 88, 196404 (2002). The authors of the Letter offer a reply.

  • Figure
  • Received 8 May 2002

DOI:https://doi.org/10.1103/PhysRevLett.89.219701

©2002 American Physical Society

Authors & Affiliations

S. V. Kravchenko

  • Physics Department Northeastern University Boston, Massachusetts 02115

A. A. Shashkin and V. T. Dolgopolov

  • Institute of Solid State Physics Chernogolovka, Moscow District 142432, Russia

Comments & Replies

Pudalov et al. Reply:

V. M. Pudalov, M. Gershenson, H. Kojima, N. Busch, E. M. Dizhur, G. Brunthaler, A. Prinz, and G. Bauer
Phys. Rev. Lett. 89, 219702 (2002)

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Original Article

Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers

V. M. Pudalov, M. E. Gershenson, H. Kojima, N. Butch, E. M. Dizhur, G. Brunthaler, A. Prinz, and G. Bauer
Phys. Rev. Lett. 88, 196404 (2002)

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Issue

Vol. 89, Iss. 21 — 18 November 2002

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