Barrierless Formation and Faceting of SiGe Islands on Si(001)

J. Tersoff, B. J. Spencer, A. Rastelli, and H. von Känel
Phys. Rev. Lett. 89, 196104 – Published 22 October 2002

Abstract

The initial stages of the formation of SiGe islands on Si(001) pose a long-standing puzzle. We show that the behavior can be consistently explained by one simple assumption—that for strained SiGe, (001) is a stable orientation but not a facet orientation. Calculations of energy and morphology reproduce the key features of “prepyramid” and “pyramid” islands, and explain the initial formation and subsequent shape transition. Scanning tunneling microscopy measurements confirm the key assumptions and predictions of the model.

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  • Received 25 July 2002

DOI:https://doi.org/10.1103/PhysRevLett.89.196104

©2002 American Physical Society

Authors & Affiliations

J. Tersoff1, B. J. Spencer2, A. Rastelli3, and H. von Känel4,5

  • 1IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598
  • 2Department of Mathematics, State University of New York at Buffalo, Buffalo, New York 14260-2900
  • 3INFM, Dipartimento di Fisica “A. Volta,” Università di Pavia, Via Bassi 6, I-27100 Pavia, Italy
  • 4INFM, Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133, Milano, Italy
  • 5Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland

Comments & Replies

Tersoff et al. Reply: Comparison of Continuum and Step Models for SiGe Islands:

J. Tersoff, B. J. Spencer, A. Rastelli, and H. Von Känel
Phys. Rev. Lett. 91, 099602 (2003)

Energies of Strained Surfaces and Barrierless Formation of Strained Islands

V. M. Kaganer and K. H. Ploog
Phys. Rev. Lett. 91, 099601 (2003)

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Vol. 89, Iss. 19 — 4 November 2002

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