Quantum Optical Studies on Individual Acceptor Bound Excitons in a Semiconductor

S. Strauf, P. Michler, M. Klude, D. Hommel, G. Bacher, and A. Forchel
Phys. Rev. Lett. 89, 177403 – Published 8 October 2002

Abstract

We demonstrate the generation of triggered single photons at a predetermined and well defined energy using the radiative recombination of single nitrogen-bound excitons in a semiconductor. The nitrogen atoms are embedded in a ZnSe quantum well structure and were excited by nonresonant optical pumping (82 MHz) at low temperature (4 K). We find resolution-limited photoluminescence lines (280   μeV) which display photon antibunching under continuous optical pumping. Our results also suggest that single nitrogen-bound excitons are well suited for cavity quantum electrodynamics experiments.

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  • Received 25 February 2002

DOI:https://doi.org/10.1103/PhysRevLett.89.177403

©2002 American Physical Society

Authors & Affiliations

S. Strauf and P. Michler

  • Institute of Solid State Physics, Semiconductor Optics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

M. Klude and D. Hommel

  • Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

G. Bacher and A. Forchel

  • Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

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Vol. 89, Iss. 17 — 21 October 2002

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