Strain-Induced Quantum Ring Hole States in a Gated Vertical Quantum Dot

Jun Liu, A. Zaslavsky, and L. B. Freund
Phys. Rev. Lett. 89, 096804 – Published 13 August 2002; Erratum Phys. Rev. Lett. 89, 119901 (2002)

Abstract

We have experimentally investigated the hole states in a gated vertical strained Si/SiGe quantum dot. We demonstrate the inhomogeneous-strain relaxation on the lateral surface creates a ringlike potential near the perimeter of the dot, which can confine hole states exhibiting quantum ring characteristics. The magnetotunneling spectroscopy exhibits the predicted periodicity of energy states in ϕ/ϕ0, but the magnitude of the energy shifts is larger than predicted by simple ring theory. Our results suggest a new way to fabricate and study quantum ring structures.

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  • Received 30 January 2002
  • Publisher error corrected 13 August 2002

DOI:https://doi.org/10.1103/PhysRevLett.89.096804

©2002 American Physical Society

Corrections

13 August 2002

Erratum

Authors & Affiliations

Jun Liu1, A. Zaslavsky2, and L. B. Freund2

  • 1Department of Physics, Brown University, Providence, Rhode Island 02912
  • 2Division of Engineering, Brown University, Providence, Rhode Island 02912

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Issue

Vol. 89, Iss. 9 — 26 August 2002

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