Weak-Localization-Like Temperature-Dependent Conductivity of a Dilute Two-Dimensional Hole Gas in a Parallel Magnetic Field

Xuan P. A. Gao, Allen P. Mills, Jr., Arthur P. Ramirez, Loren N. Pfeiffer, and Kenneth W. West
Phys. Rev. Lett. 89, 016801 – Published 12 June 2002
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Abstract

We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) in a 10 nm GaAs quantum well with densities in the range of (0.71.6)×1010cm2 on the metallic side of the zero-field “metal-insulator transition.” In a parallel field well above Bc that suppresses the metallic conductivity, the 2DHG exhibits a conductivity Δg(T)(1/π)(e2/h)lnT reminiscent of weak localization for Fermi liquids. The experiments are consistent with the coexistence of two phases in our system: a metallic phase and a weakly insulating Fermi liquid phase.

  • Received 29 October 2001

DOI:https://doi.org/10.1103/PhysRevLett.89.016801

©2002 American Physical Society

Authors & Affiliations

Xuan P. A. Gao1,2, Allen P. Mills, Jr.2, Arthur P. Ramirez3, Loren N. Pfeiffer4, and Kenneth W. West4

  • 1Department of Applied Physics & Applied Math, Columbia University, New York City, New York 10027
  • 2Department of Physics, University of California, Riverside, California 92521
  • 3Los Alamos National Laboratory, Los Alamos, New Mexico 87545
  • 4Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974

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Vol. 89, Iss. 1 — 1 July 2002

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