Origin of Compressive Residual Stress in Polycrystalline Thin Films

E. Chason, B. W. Sheldon, L. B. Freund, J. A. Floro, and S. J. Hearne
Phys. Rev. Lett. 88, 156103 – Published 29 March 2002
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Abstract

We present a model for compressive stress generation during thin film growth in which the driving force is an increase in the surface chemical potential caused by the deposition of atoms from the vapor. The increase in surface chemical potential induces atoms to flow into the grain boundary, creating a compressive stress in the film. We develop kinetic equations to describe the stress evolution and dependence on growth parameters. The model is used to explain measurements of relaxation when growth is terminated and the dependence of the steady-state stress on growth rate.

  • Received 16 August 2001

DOI:https://doi.org/10.1103/PhysRevLett.88.156103

©2002 American Physical Society

Authors & Affiliations

E. Chason, B. W. Sheldon, and L. B. Freund

  • Division of Engineering, Brown University, Providence, Rhode Island 02912

J. A. Floro and S. J. Hearne

  • Sandia National Laboratories, Albuquerque, New Mexico 87185-1415

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Vol. 88, Iss. 15 — 15 April 2002

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