Quantitative Determination of the Metastability of Flat Ag Overlayers on GaAs(110)

Hongbin Yu, C. S. Jiang, Ph. Ebert, X. D. Wang, J. M. White, Qian Niu, Zhenyu Zhang, and C. K. Shih
Phys. Rev. Lett. 88, 016102 – Published 14 December 2001
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Abstract

Atomically flat ultrathin Ag films on GaAs(110) can be formed through a kinetic pathway. However, such films are metastable and will transform to 3D islands upon high temperature annealing. Using scanning tunneling microscopy, we have measured quantitatively the layer-resolved metastability of flat Ag overlayers as they evolve toward their stable state, and deduced the corresponding kinetic barrier the system has to overcome in reaching the stable state. These results indicate that the metastability of the Ag overlayer is defined by the quantum nature of the conduction electrons confined within the overlayer.

  • Received 22 December 2000

DOI:https://doi.org/10.1103/PhysRevLett.88.016102

©2001 American Physical Society

Authors & Affiliations

Hongbin Yu1, C. S. Jiang1, Ph. Ebert2, X. D. Wang1, J. M. White3,4,5, Qian Niu1,5, Zhenyu Zhang6, and C. K. Shih1,4,5

  • 1Department of Physics, The University of Texas at Austin, Austin, Texas 78712
  • 2Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
  • 3Department of Chemistry and Bio-Chemistry, The University of Texas at Austin, Austin, Texas 78712
  • 4Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712
  • 5Center for Nano and Molecular Science and Technology, The University of Texas at Austin, Austin, Texas 78712
  • 6Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6032

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Vol. 88, Iss. 1 — 7 January 2002

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