A Fourfold Coordinated Point Defect in Silicon

Stefan Goedecker, Thierry Deutsch, and Luc Billard
Phys. Rev. Lett. 88, 235501 – Published 20 May 2002
PDFExport Citation

Abstract

Vacancies, interstitials, and Frenkel pairs are considered to be the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a stable point defect in silicon that has fourfold coordination and is lower in energy than the traditional defects.

  • Received 9 January 2002

DOI:https://doi.org/10.1103/PhysRevLett.88.235501

©2002 American Physical Society

Authors & Affiliations

Stefan Goedecker, Thierry Deutsch, and Luc Billard

  • Département de Recherche Fondamentale sur la Matière Condensée, SP2M/L_Sim, CEA–Grenoble, 38054 Grenoble cedex 9, France

References (Subscription Required)

Click to Expand
Issue

Vol. 88, Iss. 23 — 10 June 2002

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×