Abstract
Vacancies, interstitials, and Frenkel pairs are considered to be the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a stable point defect in silicon that has fourfold coordination and is lower in energy than the traditional defects.
- Received 9 January 2002
DOI:https://doi.org/10.1103/PhysRevLett.88.235501
©2002 American Physical Society