Thermoelectric Power of Bismuth Nanocomposites

Joseph P. Heremans, Christopher M. Thrush, Donald T. Morelli, and Ming-Cheng Wu
Phys. Rev. Lett. 88, 216801 – Published 7 May 2002
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Abstract

Because of the increase in the electronic density of states in low-dimensional systems, semiconductor quantum wires constitute a most promising thermoelectric material. We report here the first experimental observation of a very large enhancement of the thermoelectric power of composites containing bismuth nanowires with diameters of 9 and 15 nm, embedded in porous alumina and porous silica. The temperature dependence of the electrical resistance shows that the samples are semiconductors with energy gaps between 0.17 and 0.4 eV, consistent with the theoretical predictions.

  • Received 8 February 2002

DOI:https://doi.org/10.1103/PhysRevLett.88.216801

©2002 American Physical Society

Authors & Affiliations

Joseph P. Heremans, Christopher M. Thrush, Donald T. Morelli, and Ming-Cheng Wu

  • Delphi Research Labs, Delphi Corporation, Shelby Township, Michigan 48315

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Issue

Vol. 88, Iss. 21 — 27 May 2002

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