Two-Stage Kondo Effect in a Quantum Dot at a High Magnetic Field

W. G. van der Wiel, S. De Franceschi, J. M. Elzerman, S. Tarucha, L. P. Kouwenhoven, J. Motohisa, F. Nakajima, and T. Fukui
Phys. Rev. Lett. 88, 126803 – Published 7 March 2002
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Abstract

We report a strong Kondo effect (Kondo temperature 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias voltages and temperatures, the conductance is sharply reduced. The observed behavior is compared to predictions for a two-stage Kondo effect in quantum dots coupled to single-channel leads.

  • Received 19 October 2001

DOI:https://doi.org/10.1103/PhysRevLett.88.126803

©2002 American Physical Society

Authors & Affiliations

W. G. van der Wiel1, S. De Franceschi1, J. M. Elzerman1, S. Tarucha2, and L. P. Kouwenhoven1

  • 1Department of Applied Physics, DIMES, and ERATO Mesoscopic Correlation Project, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, The Netherlands
  • 2ERATO Mesoscopic Correlation Project, University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-0033, Japan

J. Motohisa, F. Nakajima, and T. Fukui

  • Research Center for Integrated Quantum Electronics, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan

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Vol. 88, Iss. 12 — 25 March 2002

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