Abstract
We report a strong Kondo effect (Kondo temperature ) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias voltages and temperatures, the conductance is sharply reduced. The observed behavior is compared to predictions for a two-stage Kondo effect in quantum dots coupled to single-channel leads.
- Received 19 October 2001
DOI:https://doi.org/10.1103/PhysRevLett.88.126803
©2002 American Physical Society