Abstract
Positron annihilation experiments have been applied to verify the formation mechanism of electrically inactive vacancy-impurity clusters in highly -type Si. We show that the migration of pairs at 450 K leads to the formation of complexes, which in turn convert to stable defects at 700 K. These processes manifest the formation of as the dominant vacancy-impurity cluster in highly -type Si. They further explain the electrical deactivation and clustering of As in epitaxial or ion-implanted Si during postgrowth heat treatment at 700 K.
- Received 10 May 2001
DOI:https://doi.org/10.1103/PhysRevLett.88.105506
©2002 American Physical Society