Effective Mass Anisotropy of Γ Electrons in GaAs/AlGaAs Quantum Wells

T. Reker, H. Im, L. E. Bremme, H. Choi, Y. Chung, P. C. Klipstein, and Hadas Shtrikman
Phys. Rev. Lett. 88, 056403 – Published 17 January 2002
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Abstract

Resonant magnetotunneling in GaAs/Al0.28Ga0.72As double barrier structures is used to demonstrate that the effective mass of confined Γ conduction electrons becomes anisotropic when an electric field is applied perpendicular to the interfaces. Although several authors have previously reported Γ-related optical anisotropy, this is the first example of a corresponding electrical anisotropy. The results are explained using a quantum mechanical model involving interface band mixing that contains additional features not found in the optical case.

  • Received 6 April 2001

DOI:https://doi.org/10.1103/PhysRevLett.88.056403

©2002 American Physical Society

Authors & Affiliations

T. Reker, H. Im*, L. E. Bremme, H. Choi, Y. Chung, and P. C. Klipstein

  • Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, United Kingdom

Hadas Shtrikman

  • Braun Center for Submicron Research, Weizmann Institute of Science, Rehovot 76100, Israel

  • *Presently at Department of Semiconductor Science, Dongguk University, Seoul, Korea.

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Issue

Vol. 88, Iss. 5 — 4 February 2002

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