Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes

R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and Ph. Avouris
Phys. Rev. Lett. 87, 256805 – Published 3 December 2001
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Abstract

Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers—the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts.

  • Received 5 July 2001

DOI:https://doi.org/10.1103/PhysRevLett.87.256805

©2001 American Physical Society

Authors & Affiliations

R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and Ph. Avouris

  • IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598

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Issue

Vol. 87, Iss. 25 — 17 December 2001

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