Ultralong Dephasing Time in InGaAs Quantum Dots

P. Borri, W. Langbein, S. Schneider, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg
Phys. Rev. Lett. 87, 157401 – Published 20 September 2001
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Abstract

We measure a dephasing time of several hundred picoseconds at low temperature in the ground-state transition of strongly confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian line shape with a lifetime-limited zero-phonon line and a broadband from elastic exciton-acoustic phonon interactions.

  • Received 8 May 2001

DOI:https://doi.org/10.1103/PhysRevLett.87.157401

©2001 American Physical Society

Authors & Affiliations

P. Borri, W. Langbein, S. Schneider, and U. Woggon

  • Experimentelle Physik IIb, Universität Dortmund, Otto-Hahn Strasse 4, D-44221 Dortmund, Germany

R. L. Sellin, D. Ouyang, and D. Bimberg

  • Institut für Festkörperphysik TU, Hardenbergstrasse 36, D-10623 Berlin, Germany

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Issue

Vol. 87, Iss. 15 — 8 October 2001

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