Band-Structure Trend in Hole-Doped Cuprates and Correlation with Tcmax

E. Pavarini, I. Dasgupta, T. Saha-Dasgupta, O. Jepsen, and O. K. Andersen
Phys. Rev. Lett. 87, 047003 – Published 10 July 2001
PDFExport Citation

Abstract

By calculation and analysis of the bare conduction bands in a large number of hole-doped high-temperature superconductors, we have identified the range of the intralayer hopping as the essential, material-dependent parameter. It is controlled by the energy of the axial orbital, a hybrid between Cu4s, apical-oxygen 2pz, and farther orbitals. Materials with higher Tcmax have larger hopping ranges and axial orbitals more localized in the CuO2 layers.

  • Received 4 December 2000

DOI:https://doi.org/10.1103/PhysRevLett.87.047003

©2001 American Physical Society

Authors & Affiliations

E. Pavarini, I. Dasgupta*, T. Saha-Dasgupta, O. Jepsen, and O. K. Andersen

  • Max-Planck-Institut für Festkörperforschung, D-70506 Stuttgart, Germany

  • *Present address: IIT Bombay, Mumbai 400 076, India.
  • Present address: S. N. Bose Centre, Calcutta 700098, India.

References (Subscription Required)

Click to Expand
Issue

Vol. 87, Iss. 4 — 23 July 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×