Deroughening of a 1D Domain Wall in an Ultrathin Magnetic Film by a Correlated Defect

T. Shibauchi, L. Krusin-Elbaum, V. M. Vinokur, B. Argyle, D. Weller, and B. D. Terris
Phys. Rev. Lett. 87, 267201 – Published 5 December 2001
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Abstract

Interaction of a field-driven magnetic domain wall with a correlated (line) defect is examined by Kerr imaging in subnanometer thin Co films. The line defect directs and confines the wall near the bottom of the effective potential trough Ueff, which competes with underlying random disorder that roughens the wall. We observe a kinetic “deroughening” with roughness exponent ζ0.1 well below ζ=2/3 characteristic of random defects. Deroughening occurs on lengths greater than an inherent elastic screening length Lel, which is consistently explained by the restoring action of Ueff.

  • Received 18 June 2001

DOI:https://doi.org/10.1103/PhysRevLett.87.267201

©2001 American Physical Society

Authors & Affiliations

T. Shibauchi1,2,*, L. Krusin-Elbaum1,†, V. M. Vinokur3, B. Argyle1, D. Weller4,‡, and B. D. Terris4

  • 1IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
  • 2MST-STC, Los Alamos National Laboratory, MS-K763, Los Alamos, New Mexico 87545
  • 3Argonne National Laboratory, Materials Science Division, 9700 South Cass Avenue, Argonne, Illinois 60439
  • 4IBM Almaden Research Center, San Jose, California 95120

  • *Present address: Department of Electronic Science and Engineering, Kyoto University, Kyoto 606-8501, Japan.
  • Corresponding author. Email address: krusin@us.ibm.com
  • Present address: Seagate Technology, Pittsburgh, PA 15203.

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Vol. 87, Iss. 26 — 24 December 2001

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