Effects of Disorder on Ferromagnetism in Diluted Magnetic Semiconductors

Mona Berciu and R. N. Bhatt
Phys. Rev. Lett. 87, 107203 – Published 21 August 2001
PDFExport Citation

Abstract

We present results of a numerical mean-field treatment of interacting spins and carriers in doped diluted magnetic semiconductors, which takes into account the positional disorder present in these alloy systems. Within our mean-field approximation, disorder enhances the ferromagnetic transition temperature for metallic densities not too far from the metal-insulator transition. Concurrently, the ferromagnetic phase is found to have very unusual temperature dependence of the magnetization as well as specific heat as a result of disorder. Unusual spin and charge transport is implied.

  • Received 17 November 2000

DOI:https://doi.org/10.1103/PhysRevLett.87.107203

©2001 American Physical Society

Authors & Affiliations

Mona Berciu and R. N. Bhatt

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544

Comments & Replies

Comment on ”Effects of Disorder on Ferromagnetism in Diluted Magnetic Semiconductors”

C. Timm, F. Schäfer, and F. von Oppen
Phys. Rev. Lett. 90, 029701 (2003)

Berciu and Bhatt Reply:

Mona Berciu and R. N. Bhatt
Phys. Rev. Lett. 90, 029702 (2003)

References (Subscription Required)

Click to Expand
Issue

Vol. 87, Iss. 10 — 3 September 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×