Theory of the Linewidth of Intersubband Plasmons in Quantum Wells

C. A. Ullrich and G. Vignale
Phys. Rev. Lett. 87, 037402 – Published 2 July 2001
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Abstract

Intersubband (ISB) plasmons in remotely doped wide quantum wells acquire a linewidth even at zero temperature and in-plane wave vector q=0 by a combination of intrinsic (electron-electron interaction) and extrinsic effects (impurities and interface roughness). We present a quantitatively accurate theory of the linewidth that treats both effects on equal footing and from first principles by a combination of time-dependent density-functional theory with the memory function formalism. Comparison with recent optical absorption experiments shows that the ISB plasmon linewidth has a significant contribution from electron-electron interaction, and is only weakly related to the mobility.

  • Received 14 December 2000

DOI:https://doi.org/10.1103/PhysRevLett.87.037402

©2001 American Physical Society

Authors & Affiliations

C. A. Ullrich1,2 and G. Vignale2

  • 1iQUEST, University of California, Santa Barbara, California 93106
  • 2Department of Physics, University of Missouri, Columbia, Missouri 65211

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Vol. 87, Iss. 3 — 16 July 2001

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