Abstract
Oxidation of SiC produces while CO is released. A “reoxidation” step at lower temperatures is, however, necessary to produce high-quality . This step is believed to cleanse the oxide of residual C without further oxidation of the SiC substrate. We report first-principles calculations that describe the nucleation and growth of O-deficient C clusters in under oxidation conditions, fed by the production of CO at the advancing interface, and their gradual dissolution by the supply of O under reoxidation conditions. We predict that both CO and are released during both steps.
- Received 6 February 2001
DOI:https://doi.org/10.1103/PhysRevLett.86.5946
©2001 American Physical Society