Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation

J. Urayama, T. B. Norris, J. Singh, and P. Bhattacharya
Phys. Rev. Lett. 86, 4930 – Published 21 May 2001
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Abstract

Time-resolved differential transmission measurements of self-assembled In0.4Ga0.6As quantum dots clearly indicate a phonon bottleneck between the n=2 and n=1 electronic levels. The key to this observation is the generation of electrons in dots where there are no holes so that electron-hole scattering does not mask the bottleneck. We use a simple carrier capture model consisting of two capture configurations to explain the bottleneck signal and offer arguments to rule out other possible sources of the signal.

  • Received 27 June 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.4930

©2001 American Physical Society

Authors & Affiliations

J. Urayama and T. B. Norris

  • Center for Ultrafast Optical Science and Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2099

J. Singh and P. Bhattacharya

  • Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122

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Vol. 86, Iss. 21 — 21 May 2001

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