Thermodynamics of C Incorporation on Si(100) from ab initio Calculations

I. N. Remediakis, Efthimios Kaxiras, and P. C. Kelires
Phys. Rev. Lett. 86, 4556 – Published 14 May 2001
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Abstract

We study the thermodynamics of C incorporation on Si(100), a system where strain and chemical effects are both important. Our analysis is based on first-principles atomistic calculations to obtain the important lowest-energy structures, and a classical effective Hamiltonian which is employed to represent the long-range strain effects and incorporate the thermodynamic aspects. We determine the equilibrium phase diagram in temperature and C chemical potential, which allows us to predict the mesoscopic structure of the system that should be observed under experimentally relevant conditions.

  • Received 3 August 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.4556

©2001 American Physical Society

Authors & Affiliations

I. N. Remediakis1,2, Efthimios Kaxiras1,3, and P. C. Kelires2,3

  • 1Department of Physics and Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
  • 2Department of Physics, University of Crete, 71003 Heraklion, Crete, Greece
  • 3Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas (FORTH), Heraklion, Crete, Greece

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Vol. 86, Iss. 20 — 14 May 2001

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