Effect of Anisotropic Strain on the Crosshatch Electrical Activity in Relaxed GeSi Films

M. H. Gray, J. W. P. Hsu, L. Giovane, and M. T. Bulsara
Phys. Rev. Lett. 86, 3598 – Published 16 April 2001
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Abstract

The physical origin of the crosshatch electrical activity in relaxed GeSi films was studied using a near-field scanning optical microscope (NSOM). The contrast and patterns in the near-field photocurrent images depend on the polarization direction of the NSOM light. These results rule out composition nonuniformity, junction depth variation, and scanning artifacts as dominant sources of the contrast. Numerical calculations show that local changes in band structure due to strain fields of the misfit dislocations are responsible for the experimental observations.

  • Received 6 October 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.3598

©2001 American Physical Society

Authors & Affiliations

M. H. Gray1, J. W. P. Hsu*, L. Giovane3, and M. T. Bulsara4

  • 1Department of Physics, University of Virginia, Charlottesville, Virginia 22901
  • 2Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974
  • 3Fiber-Optic Communications, Agilent Technologies, San Jose, California 95131
  • 4AmberWaves Systems Corporation, Salem, New Hampshire 03079

  • *Corresponding author.Electronic address: jhsu@lucent.com

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Vol. 86, Iss. 16 — 16 April 2001

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