Kinetically Assisted Potential Sputtering of Insulators by Highly Charged Ions

G. Hayderer, S. Cernusca, M. Schmid, P. Varga, HP. Winter, F. Aumayr, D. Niemann, V. Hoffmann, N. Stolterfoht, C. Lemell, L. Wirtz, and J. Burgdörfer
Phys. Rev. Lett. 86, 3530 – Published 16 April 2001
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Abstract

A new form of potential sputtering has been found for impact of slow ( 1500eV) multiply charged Xe ions (charge states up to q=25) on MgOx. In contrast to alkali-halide or SiO2 surfaces this mechanism requires the simultaneous presence of electronic excitation of the target material and of a kinetically formed collision cascade within the target in order to initiate the sputtering process. This kinetically assisted potential sputtering mechanism has been identified to be present for other insulating surfaces as well.

  • Received 12 September 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.3530

©2001 American Physical Society

Authors & Affiliations

G. Hayderer, S. Cernusca, M. Schmid, P. Varga, HP. Winter, and F. Aumayr*

  • Institut für Allgemeine Physik, TU Wien, Wiedner Hauptstrasse 8-10, A-1040 Vienna, Austria

D. Niemann, V. Hoffmann, and N. Stolterfoht

  • Hahn Meitner Institut, Glienickerstrasse 100, D-10109 Berlin, Germany

C. Lemell, L. Wirtz, and J. Burgdörfer

  • Institute for Theoretical Physics, Vienna University of Technology, Wiedner Hauptstrasse 8-10, A-1040 Vienna, Austria

  • *To whom correspondence should be addressed. Email address: aumayr@iap.tuwien.ac.at

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Vol. 86, Iss. 16 — 16 April 2001

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