Standing Optical Phonons in Finite Semiconductor Superlattices Studied by Resonant Raman Scattering in a Double Microcavity

A. Fainstein, M. Trigo, D. Oliva, B. Jusserand, T. Freixanet, and V. Thierry-Mieg
Phys. Rev. Lett. 86, 3411 – Published 9 April 2001
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Abstract

We report optical double resonant enhancement of Raman scattering in a new double microcavity geometry. The design allows almost backscattering geometries, providing easy access to the excitations' in-plane dispersion. The cavity is used to study the phonon spectra of a finite GaAs/AlAs superlattice. A new type of “standing optical vibration” is demonstrated involving the GaAs confined phonons with a standing wave envelope determined by the superlattice thickness. A strong dispersion of the first order standing wave mode is observed, as well as its anticrossing with higher order confined modes of the same symmetry.

  • Received 12 October 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.3411

©2001 American Physical Society

Authors & Affiliations

A. Fainstein1, M. Trigo1, D. Oliva1, B. Jusserand2, T. Freixanet3, and V. Thierry-Mieg3

  • 1Centro Atómico Bariloche & Instituto Balseiro, C.N.E.A., 8400 S. C. de Bariloche, Argentina
  • 2“Concepts and Devices for Photonics,” CNRS-FTR&D, B.P. 107, 92225 Bagneux Cedex, France
  • 3Laboratoire de Microstructures et de Microélectronique, CNRS, B.P. 107, 92225 Bagneux Cedex, France

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Vol. 86, Iss. 15 — 9 April 2001

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