Magneto Infrared Absorption in High Electron Density GaAs Quantum Wells

A. J. L. Poulter, J. Zeman, D. K. Maude, M. Potemski, G. Martinez, A. Riedel, R. Hey, and K. J. Friedland
Phys. Rev. Lett. 86, 336 – Published 8 January 2001
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Abstract

Magneto infrared absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.

  • Received 21 April 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.336

©2001 American Physical Society

Authors & Affiliations

A. J. L. Poulter, J. Zeman*, D. K. Maude, M. Potemski, and G. Martinez

  • Grenoble High Magnetic Field Laboratory MPI-FKF/CNRS, 25 Avenue des Martyrs, F-38042 Grenoble Cedex 9, France

A. Riedel, R. Hey, and K. J. Friedland

  • Paul Drude Institute, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

  • *On leave from the Institute of Physics, Academy of Sciences of Czech Republic, Prague, Czech Republic.

Comments & Replies

Poulter et al. Reply:

A. J. L. Poulter, C. Faugeras, J. Zeman, M. Potemski, D. K. Maude, and G. Martinez
Phys. Rev. Lett. 89, 039704 (2002)

Comment on “Magneto Infrared Absorption in High Electron Density GaAs Quantum Wells”

Bo Zhang, M. F. Manger, and E. Batke
Phys. Rev. Lett. 89, 039703 (2002)

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Vol. 86, Iss. 2 — 8 January 2001

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