Resonant Tunneling into a Biased Fractional Quantum Hall Edge

M. Grayson, D. C. Tsui, L. N. Pfeiffer, K. W. West, and A. M. Chang
Phys. Rev. Lett. 86, 2645 – Published 19 March 2001
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Abstract

We observe resonant tunneling into a voltage biased fractional quantum Hall effect (FQHE) edge, using atomically sharp tunnel barriers unique to cleaved-edge overgrown devices. The resonances demonstrate different tunnel couplings to the metallic lead and the FQHE edge. Weak coupling to the FQHE edge produces clear non-Fermi liquid behavior with a sixfold increase in resonance area under bias arising from the power law density of states at the FQHE edge. A simple device model uses the resonant tunneling formalism for chiral Luttinger liquids to successfully describe the data.

  • Received 11 October 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.2645

©2001 American Physical Society

Authors & Affiliations

M. Grayson1,2, D. C. Tsui1, L. N. Pfeiffer3, K. W. West3, and A. M. Chang3,4

  • 1Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
  • 2Walter Schottky Institut, Technische Universität München, D-85748 Garching, Germany
  • 3Bell Laboratories, Lucent Technologies, 600-700 Mountain Avenue, Murray Hill, New Jersey 07974-0636
  • 4Department of Physics, Purdue University, West Lafayette, Indiana 47907-1396

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Vol. 86, Iss. 12 — 19 March 2001

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