Abstract
Amorphous silicon quantum dots ( QDs) were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Transmission electron micrographs clearly demonstrated that QDs were formed in the silicon nitride. Photoluminescence and optical absorption energy measurement of QDs with various sizes revealed that tuning of the photoluminescence emission from 2.0 to 2.76 eV is possible by controlling the size of the QD. Analysis also showed that the photoluminescence peak energy was related to the size of the QD, (nm) by , which is a clear evidence for the quantum confinement effect in QDs.
- Received 4 April 2000
DOI:https://doi.org/10.1103/PhysRevLett.86.1355
©2001 American Physical Society