Quantum Confinement in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride

Nae-Man Park, Chel-Jong Choi, Tae-Yeon Seong, and Seong-Ju Park
Phys. Rev. Lett. 86, 1355 – Published 12 February 2001
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Abstract

Amorphous silicon quantum dots ( aSi QDs) were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. Transmission electron micrographs clearly demonstrated that aSi QDs were formed in the silicon nitride. Photoluminescence and optical absorption energy measurement of aSi QDs with various sizes revealed that tuning of the photoluminescence emission from 2.0 to 2.76 eV is possible by controlling the size of the aSi QD. Analysis also showed that the photoluminescence peak energy E was related to the size of the aSi QD, a (nm) by E(eV)=1.56+2.40/a2, which is a clear evidence for the quantum confinement effect in aSi QDs.

  • Received 4 April 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.1355

©2001 American Physical Society

Authors & Affiliations

Nae-Man Park, Chel-Jong Choi, Tae-Yeon Seong, and Seong-Ju Park*

  • Department of Materials Science and Engineering and Center for Optoelectronic Materials Research, Kwangju Institute of Science and Technology, Kwangju, 500-712, Korea

  • *Corresponding author: sjpark@kjist.ac.kr

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Issue

Vol. 86, Iss. 7 — 12 February 2001

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