Abstract
We report very low temperature ( ) thermopower and resistivity ( ) measurements on variable-density, two-dimensional hole systems confined to GaAs quantum wells. As the hole density is lowered from to , the system crosses from an insulating ( ) to a metallic regime ( ) and finally displays insulating behavior ( ). Diffusion thermopower shows a striking sign reversal in a narrow range of density in the metallic regime, suggesting a qualitative change in the conduction or the scattering mechanism.
- Received 5 July 2000
DOI:https://doi.org/10.1103/PhysRevLett.85.4369
©2000 American Physical Society