Anomalous Thermopower in the Metalliclike Phase of a 2D Hole System

L. Moldovan, S. Melinte, V. Bayot, S. J. Papadakis, E. P. De Poortere, and M. Shayegan
Phys. Rev. Lett. 85, 4369 – Published 13 November 2000
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Abstract

We report very low temperature ( T) thermopower and resistivity ( ρ) measurements on variable-density, two-dimensional hole systems confined to GaAs quantum wells. As the hole density is lowered from 1.49×1011cm2 to 0.14×1011cm2, the system crosses from an insulating ( dρdT0) to a metallic regime ( dρdT>0) and finally displays insulating behavior ( dρdT<0). Diffusion thermopower shows a striking sign reversal in a narrow range of density in the metallic regime, suggesting a qualitative change in the conduction or the scattering mechanism.

  • Received 5 July 2000

DOI:https://doi.org/10.1103/PhysRevLett.85.4369

©2000 American Physical Society

Authors & Affiliations

L. Moldovan1,2, S. Melinte1, V. Bayot3, S. J. Papadakis4, E. P. De Poortere4, and M. Shayegan4

  • 1Unité de Physico-Chimie et de Physique des Matériaux, Université Catholique de Louvain, Place Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgium
  • 2Department of Electrical Engineering, University of Oradea, 3700 Oradea, Romania
  • 3Microelectronics Laboratory, Université Catholique de Louvain, Place du Levant 3, B-1348 Louvain-la-Neuve, Belgium
  • 4Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544

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Vol. 85, Iss. 20 — 13 November 2000

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