Abstract
We propose that the photonic band structure (PBS) of semiconductor-based photonic crystals (PCs) can be made tunable if the free-carrier density is sufficiently high. In this case, the dielectric constant of the semiconductor, modeled as , depends on the temperature and on the impurity concentration through the plasma frequency . Then the PBS is strongly and dependent; it is even possible to obliterate a photonic band gap. This is shown by calculating the 2D PBS for PCs that incorporate either intrinsic InSb or extrinsic Ge.
- Received 24 September 1999
DOI:https://doi.org/10.1103/PhysRevLett.85.1875
©2000 American Physical Society