Dephasing Times in Quantum Dots due to Elastic LO Phonon-Carrier Collisions

A. V. Uskov, A.-P. Jauho, B. Tromborg, J. Mørk, and R. Lang
Phys. Rev. Lett. 85, 1516 – Published 14 August 2000
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Abstract

Interpretation of experiments on quantum dot (QD) lasers presents a challenge: the phonon bottleneck, which should strongly suppress relaxation and dephasing of the discrete energy states, often seems to be inoperative. We suggest and develop a theory for an intrinsic mechanism for dephasing in QDs: second-order elastic interaction between quantum dot charge carriers and LO phonons. The calculated dephasing times are of the order of 200 fs at room temperature, consistent with experiments. The phonon bottleneck thus does not prevent significant room temperature dephasing.

  • Received 20 December 1999

DOI:https://doi.org/10.1103/PhysRevLett.85.1516

©2000 American Physical Society

Authors & Affiliations

A. V. Uskov1,2,4,5, A.-P. Jauho3, B. Tromborg2, J. Mørk2, and R. Lang4,5

  • 1Lebedev Physical Institute, Leninsky prospekt 53, 117924 Moscow, Russia
  • 2Research Center COM, Technical University of Denmark, Building 349, DK-2800 Lyngby, Denmark
  • 3Mikroelektronik Centret, Technical University of Denmark, Building 345 East, DK-2800 Lyngby, Denmark
  • 4Department of Applied Physics, Tokyo University of Agriculture and Technology, Koganei-shi 184-8588, Japan
  • 5and CREST, Japan Science and Technology Corporation, Japan

Comments & Replies

Comment on “Dephasing Times in Quantum Dots due to Elastic LO Phonon-Carrier Collisions”

E. A. Muljarov and R. Zimmermann
Phys. Rev. Lett. 96, 019703 (2006)

Uskov et al. Reply:

A. V. Uskov, A. P. Jauho, B. Tromborg, J. Mørk, and R. Lang
Phys. Rev. Lett. 96, 019704 (2006)

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Vol. 85, Iss. 7 — 14 August 2000

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