Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

P. W. Fry, I. E. Itskevich, D. J. Mowbray, M. S. Skolnick, J. J. Finley, J. A. Barker, E. P. O'Reilly, L. R. Wilson, I. A. Larkin, P. A. Maksym, M. Hopkinson, M. Al-Khafaji, J. P. R. David, A. G. Cullis, G. Hill, and J. C. Clark
Phys. Rev. Lett. 84, 733 – Published 24 January 2000
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Abstract

New information on the electron-hole wave functions in InAs-GaAs self-assembled quantum dots is deduced from Stark effect spectroscopy. Most unexpectedly it is shown that the hole is localized towards the top of the dot, above the electron, an alignment that is inverted relative to the predictions of all recent calculations. We are able to obtain new information on the structure and composition of buried quantum dots from modeling of the data. We also demonstrate that the excited state transitions arise from lateral quantization and that tuning through the inhomogeneous distribution of dot energies can be achieved by variation of electric field.

  • Received 5 April 1999

DOI:https://doi.org/10.1103/PhysRevLett.84.733

©2000 American Physical Society

Authors & Affiliations

P. W. Fry1, I. E. Itskevich2,1, D. J. Mowbray1, M. S. Skolnick1, J. J. Finley1, J. A. Barker3, E. P. O'Reilly3, L. R. Wilson1, I. A. Larkin1, P. A. Maksym4, M. Hopkinson5, M. Al-Khafaji5, J. P. R. David5, A. G. Cullis5, G. Hill5, and J. C. Clark5

  • 1Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom
  • 2Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow district, 142432, Russia
  • 3Department of Physics, University of Surrey, Guildford GU2 5XH, United Kingdom
  • 4Department of Physics, University of Leicester, Leicester LE1 7RH, United Kingdom
  • 5Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

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Vol. 84, Iss. 4 — 24 January 2000

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