Theory of Diluted Magnetic Semiconductor Ferromagnetism

Jürgen König, Hsiu-Hau Lin, and Allan H. MacDonald
Phys. Rev. Lett. 84, 5628 – Published 12 June 2000
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Abstract

We present a theory of carrier-induced ferromagnetism in diluted magnetic semiconductors ( III1xMnxV) which allows for arbitrary itinerant-carrier spin polarization and dynamic correlations. Both ingredients are essential in identifying the system's elementary excitations and describing their properties. We find a branch of collective modes, in addition to the spin waves and Stoner continuum which occur in metallic ferromagnets, and predict that the low-temperature spin stiffness is independent of the strength of the exchange coupling between magnetic ions and itinerant carriers. We discuss the temperature dependence of the magnetization and the heat capacity.

  • Received 24 January 2000

DOI:https://doi.org/10.1103/PhysRevLett.84.5628

©2000 American Physical Society

Authors & Affiliations

Jürgen König1, Hsiu-Hau Lin1,2, and Allan H. MacDonald1

  • 1Department of Physics, Indiana University, Bloomington, Indiana 47405
  • 2Department of Physics, National Tsing-Hua University, Hsinchu 300, Taiwan

Comments & Replies

König, Lin, and MacDonald Reply:

J. König, H. H. Lin, and A. H. MacDonald
Phys. Rev. Lett. 86, 5637 (2001)

Comment on “Theory of Diluted Magnetic Semiconductor Ferromagnetism”

Min-Fong Yang, Shih-Jye Sun, and Ming-Che Chang
Phys. Rev. Lett. 86, 5636 (2001)

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Vol. 84, Iss. 24 — 12 June 2000

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