Intrinsic Electrical Properties of Individual Single-Walled Carbon Nanotubes with Small Band Gaps

Chongwu Zhou, Jing Kong, and Hongjie Dai
Phys. Rev. Lett. 84, 5604 – Published 12 June 2000
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Abstract

Individual single-walled carbon nanotubes (SWNT) exhibiting small band gaps on the order of 10 meV are observed for the first time in electron transport measurements. Transport through the valence or conduction band of a small-gap semiconducting SWNT (SGS-SWNT) can be tuned by a nearby gate voltage. Intrinsic electrical properties of the Ohmically contacted SGS-SWNT are elucidated. An SGS-SWNT exhibits metal- or semiconductorlike characteristics depending on the Fermi level position in the band structure.

  • Received 16 September 1999

DOI:https://doi.org/10.1103/PhysRevLett.84.5604

©2000 American Physical Society

Authors & Affiliations

Chongwu Zhou, Jing Kong, and Hongjie Dai

  • Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, California 94305

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Vol. 84, Iss. 24 — 12 June 2000

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