Pseudogap Formation in the Intermetallic Compounds (Fe1xVx)3Al

H. Okamura, J. Kawahara, T. Nanba, S. Kimura, K. Soda, U. Mizutani, Y. Nishino, M. Kato, I. Shimoyama, H. Miura, K. Fukui, K. Nakagawa, H. Nakagawa, and T. Kinoshita
Phys. Rev. Lett. 84, 3674 – Published 17 April 2000
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Abstract

Optical conductivity data of the intermetallic compounds (Fe1xVx)3Al ( 0x0.33) reveal that their density of states around the Fermi energy ( EF) is strongly reduced as x is increased. In particular, Fe2VAl ( x=0.33) has a deep, well-developed pseudogap of 0.10.2eV at EF and a small density ( 5×1020cm3) of carriers, which is highly unusual for intermetallic compounds. It is shown that the pseudogap results from the band structure of Fe2VAl, rather than from temperature-dependent correlation effects. Based on the present results, we propose a simple model that consistently explains both the semiconductorlike transport and the metallic photoemission results previously observed for Fe2VAl.

  • Received 19 October 1999

DOI:https://doi.org/10.1103/PhysRevLett.84.3674

©2000 American Physical Society

Authors & Affiliations

H. Okamura1, J. Kawahara1, T. Nanba1, S. Kimura1, K. Soda2, U. Mizutani2, Y. Nishino3, M. Kato3, I. Shimoyama1,*, H. Miura4, K. Fukui5, K. Nakagawa1, H. Nakagawa4, and T. Kinoshita5,†

  • 1Department of Physics and Graduate School of Science and Technology, Kobe University, Kobe 657-8501, Japan
  • 2Department of Crystalline Materials Science, Nagoya University, Nagoya 464-8603, Japan
  • 3Department of Materials Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan
  • 4Department of Electrical Engineering, Fukui University, Fukui 910-8507, Japan
  • 5UVSOR Facility, Institute for Molecular Science, Okazaki 444-8585, Japan

  • *Present address: Japan Atomic Energy Research Institute, Ibaragi 319-1195, Japan.
  • Present address: Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo 109-8666, Japan.

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Vol. 84, Iss. 16 — 17 April 2000

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