Abstract
Optical second harmonic generation (SHG) spectroscopy is used to probe Si(001) following thermal decomposition of diborane at the surface. Incorporation of boron (B) at second layer substitutional sites at H-free Si(001) intensifies and redshifts the SHG spectral peak, while subsequent H termination further intensifies and blueshifts , in sharp contrast to the effect of bulk B doping or nonsubstitutional B. Ab initio pseudopotential and semiempirical tight binding calculations independently reproduce these unique trends, and attribute them to the surface electric field associated with charge transfer to electrically active B acceptors, and rehybridization of atomic bonds.
- Received 15 December 1999
DOI:https://doi.org/10.1103/PhysRevLett.84.3406
©2000 American Physical Society