Low-Temperature Saturation of the Dephasing Time and Effects of Microwave Radiation on Open Quantum Dots

A. G. Huibers, J. A. Folk, S. R. Patel, C. M. Marcus, C. I. Duruöz, and J. S. Harris, Jr.
Phys. Rev. Lett. 83, 5090 – Published 13 December 1999
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Abstract

The dephasing time τϕ of electrons in open semiconductor quantum dots, measured using ballistic weak localization, is found to saturate below 100mK, roughly twice the electron base temperature, independent of dot size. Microwave radiation deliberately coupled to the dots affects quantum interference indistinguishably from elevated temperatures, suggesting that direct dephasing due to radiation is not the cause of the observed saturation. Coulomb blockade measurements show that the applied microwaves create sufficient source-drain voltages to account for dephasing due to Joule heating.

  • Received 20 April 1999

DOI:https://doi.org/10.1103/PhysRevLett.83.5090

©1999 American Physical Society

Authors & Affiliations

A. G. Huibers, J. A. Folk, S. R. Patel, and C. M. Marcus

  • Department of Physics, Stanford University, Stanford, California 94305

C. I. Duruöz and J. S. Harris, Jr.

  • Department of Electrical Engineering, Stanford University, Stanford, California 94305

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Vol. 83, Iss. 24 — 13 December 1999

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