Determination of Phonon Dispersions from X-Ray Transmission Scattering: The Example of Silicon

M. Holt; Z. Wu; Hawoong Hong; P. Zschack; P. Jemian; J. Tischler; Haydn Chen; T.-C. Chiang

doi:10.1103/PhysRevLett.83.3317

Determination of Phonon Dispersions from X-Ray Transmission Scattering: The Example of Silicon

M. Holt, Z. Wu, Hawoong Hong, P. Zschack, P. Jemian, J. Tischler, Haydn Chen, and T.-C. Chiang

Phys. Rev. Lett. 83, 3317 – Published 18 October 1999

Abstract

A beam of monochromatic synchrotron x-ray incident on a silicon wafer creates a rich intensity pattern behind the wafer that reflects the cross section of scattering by thermally populated phonons. A least-squares fit of the patterns based on a lattice dynamics calculation yields the phonon dispersion relations over the entire reciprocal space. This simple and efficient method is suitable for phonon studies in essentially all materials, and complements the traditional neutron scattering technique.

Received 6 May 1999

DOI:https://doi.org/10.1103/PhysRevLett.83.3317

Authors & Affiliations

M. Holt^1,2, Z. Wu^1,3, Hawoong Hong¹, P. Zschack¹, P. Jemian¹, J. Tischler⁴, Haydn Chen^1,3, and T.-C. Chiang^1,2,*

¹Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902
²Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080
³Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 West Green Street, Urbana, Illinois 61801-2980
⁴Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6033