Lead-Orientation-Dependent Wave Function Scarring in Open Quantum Dots

J. P. Bird, R. Akis, D. K. Ferry, D. Vasileska, J. Cooper, Y. Aoyagi, and T. Sugano
Phys. Rev. Lett. 82, 4691 – Published 7 June 1999
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Abstract

Experimental studies of the conductance of open quantum dots show a series of highly regular oscillations at low temperatures as the voltage applied to their defining gates is varied. Simulations of quantum transport through these dots reveal the oscillations to be correlated to the recurrence of specific groups of wave function scars. We furthermore find that nominally identical dots, differing only in the orientation of their input and output contacts, may be used to excite different families of scars, giving rise in turn to measurable transport results.

  • Received 9 November 1998

DOI:https://doi.org/10.1103/PhysRevLett.82.4691

©1999 American Physical Society

Authors & Affiliations

J. P. Bird1, R. Akis1, D. K. Ferry1, D. Vasileska1, J. Cooper2, Y. Aoyagi2, and T. Sugano2

  • 1Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287-5706
  • 2Nanoelectronic Materials Laboratory, Frontier Research Program, RIKEN, 2-1 Hirosawa, Wako-shi, Saitama 351-01, Japan

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Vol. 82, Iss. 23 — 7 June 1999

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