Oxygen-Induced Vacancy Formation on a Metal Surface

M. Schmid; G. Leonardelli; M. Sporn; E. Platzgummer; W. Hebenstreit; M. Pinczolits; P. Varga

doi:10.1103/PhysRevLett.82.355

Oxygen-Induced Vacancy Formation on a Metal Surface

M. Schmid, G. Leonardelli, M. Sporn, E. Platzgummer, W. Hebenstreit, M. Pinczolits, and P. Varga

Phys. Rev. Lett. 82, 355 – Published 11 January 1999

Abstract

Using scanning tunneling microscopy, low-energy ion scattering, and quantitative low-energy electron diffraction, we find about $17 %$ metal vacancies on the oxygen-covered Cr(100) surface. The oxygen atoms occupy all the hollow sites of the first layer, including those neighboring a Cr vacancy. We argue that the vacancy formation is energetically favored and not caused by stress but by electronic effects.

Received 10 June 1998

DOI:https://doi.org/10.1103/PhysRevLett.82.355

Authors & Affiliations

M. Schmid, G. Leonardelli, M. Sporn, E. Platzgummer, W. Hebenstreit^*, M. Pinczolits^†, and P. Varga

Institut für Allgemeine Physik, TU Wien, Wiedner Hauptstrasse 8-10, A-1040, Austria

^*Present address: Department of Physics, Tulane University, New Orleans, LA 70118.
^†Present address: Institut für Halbleiterphysik, Johannes-Kepler Universität Linz, A-4040 Linz, Austria.