Abstract
We find that mesoscopic conductance fluctuations in the quantum Hall regime in silicon MOSFETs display simple and striking patterns. The fluctuations fall into distinct groups which move along lines parallel to loci of integer filling factor in the gate voltage–magnetic field plane. Also, a relationship appears between the fluctuations on quantum Hall transitions and those found at low densities in zero magnetic field. These phenomena are most naturally attributed to charging effects. We argue that they are the first unambiguous manifestation of interactions in dc transport in the integer quantum Hall effect.
- Received 10 February 1999
DOI:https://doi.org/10.1103/PhysRevLett.82.4695
©1999 American Physical Society
