Reentrant Insulator-Metal-Insulator Transition at B=0 in a Two-Dimensional Hole Gas

A. R. Hamilton, M. Y. Simmons, M. Pepper, E. H. Linfield, P. D. Rose, and D. A. Ritchie
Phys. Rev. Lett. 82, 1542 – Published 15 February 1999
PDFExport Citation

Abstract

We report the observation of a reentrant insulator-metal-insulator transition at B=0 in a two-dimensional (2D) hole gas in GaAs at temperatures down to 30 mK. At the lowest carrier densities the holes are strongly localized. As the carrier density is increased a metallic phase forms, with a clear transition at σ5e2/h. Further increasing the density weakens the metallic behavior and eventually leads to the formation of a second insulating state for σ50e2/h. In the limit of high carrier densities, where kFl is large and rs is small, we thus recover the results of previous work on weakly interacting systems showing the absence of a 2D metallic state.

  • Received 29 July 1998

DOI:https://doi.org/10.1103/PhysRevLett.82.1542

©1999 American Physical Society

Authors & Affiliations

A. R. Hamilton, M. Y. Simmons, M. Pepper, E. H. Linfield, P. D. Rose, and D. A. Ritchie

  • Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom

References (Subscription Required)

Click to Expand
Issue

Vol. 82, Iss. 7 — 15 February 1999

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×