Magnetic Domain Dependent Quantum Transport through a Ferromagnetic Dot Embedded in a Semiconductor Quantum Wire

Syoji Yamada, Tomoyuki Kikutani, Nobuyuki Aoki, Hidenobu Hori, and Gen Tatara
Phys. Rev. Lett. 81, 5422 – Published 14 December 1998
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Abstract

Two unique quantum transport features, a clear appearance of Coulomb oscillations and a narrowing of Coulomb gap, are observed in an embedded ferromagnet (Ni) dot in a semiconductor wire after magnetic field application. Magnetic force microscopy analysis suggests the existence of a domain wall inside the dot before the field application, but it disappears after the field application forming a single domain in the dot. If we establish a transport model by assuming that the domain wall plays the role of a “resistive barrier,” we can explain those unique transport features in terms of “Coulomb blockade effects modified by domain dynamics.”

  • Received 19 March 1998

DOI:https://doi.org/10.1103/PhysRevLett.81.5422

©1998 American Physical Society

Authors & Affiliations

Syoji Yamada*, Tomoyuki Kikutani, Nobuyuki Aoki, and Hidenobu Hori

  • School of Materials Science, JAIST-Hokuriku, 1-1, Asahi-dai, Tatsunokuchi, Ishikawa 923-12, Japan

Gen Tatara

  • Faculty of Science, Osaka University, 1-1, Machikaneyama, Toyonaka, Osaka 565, Japan

  • *Email address: shooji@jaist.ac.jp

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Issue

Vol. 81, Iss. 24 — 14 December 1998

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