Abstract
The epitaxial embedding of faceted three-dimensional SiGe islands in a Si matrix has been investigated by low-energy electron microscopy. Under a Si flux these islands expand and undergo a shape change to incorporate a (100) top facet. A physical interpretation of the atomistic mechanism producing the shape change is presented and supported with a simple model.
- Received 28 May 1998
DOI:https://doi.org/10.1103/PhysRevLett.81.3471
©1998 American Physical Society
