Abstract
Contrasting behaviors are observed in island formation during vapor phase epitaxy: variation of group V partial pressures gives different critical thicknesses for the onset of the Stranski-Krastanow transformation, surface coverages, ratios between coherent and incoherent islands, and dissimilar morphologies upon annealing. The latter experiments show that small lens-shaped islands can be found in equilibrium if InGaAs surface energies are minimized, leading to the conclusion that can raise surface energies and act as an impurity-free “morphactant.”
- Received 20 April 1998
DOI:https://doi.org/10.1103/PhysRevLett.81.2486
©1998 American Physical Society