Ultrafast Adiabatic Population Transfer in p-Doped Semiconductor Quantum Wells

R. Binder and M. Lindberg
Phys. Rev. Lett. 81, 1477 – Published 17 August 1998
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Abstract

The light-induced adiabatic population transfer of holes from the heavy-hole ( hh) to the light-hole ( lh) band in p-doped semiconductor quantum wells is investigated theoretically. The exact analog to the population-trapped state (PTS) used in atomic and molecular adiabatic population transfer does not exist in a semiconductor due to the continuum of transition energies and the dynamic light-induced shifts thereof. However, it is found that the population transfer only requires an approximate PTS condition to be fulfilled. As for a possible observation of the effect, the transient creation of a hh exciton resonance at the expense of the lh exciton is predicted.

  • Received 17 April 1998

DOI:https://doi.org/10.1103/PhysRevLett.81.1477

©1998 American Physical Society

Authors & Affiliations

R. Binder

  • Optical Sciences Center, University of Arizona, Tucson, Arizona 85721

M. Lindberg

  • Institutionen för Fysik, Åbo Akademi, Porthansgatan 3, 20500 Åbo, Finland

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Vol. 81, Iss. 7 — 17 August 1998

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