New Liquid Phase and Metal-Insulator Transition in Si MOSFETs

Song He and X. C. Xie
Phys. Rev. Lett. 80, 3324 – Published 13 April 1998
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Abstract

We argue that there is a new liquid phase in the two-dimensional electron system in Si MOSFETs at low enough electron densities. The recently observed metal-insulator transition results as a crossover from the percolation transition of the liquid phase through the disorder landscape in the system below the liquid-gas critical temperature. The consequences of our theory are discussed for variety of physical properties relevant to the recent experiments.

  • Received 6 November 1997

DOI:https://doi.org/10.1103/PhysRevLett.80.3324

©1998 American Physical Society

Authors & Affiliations

Song He

  • Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974

X. C. Xie

  • Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078

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Vol. 80, Iss. 15 — 13 April 1998

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