Island Size Scaling in InAs/GaAs Self-Assembled Quantum Dots

Y. Ebiko, S. Muto, D. Suzuki, S. Itoh, K. Shiramine, T. Haga, Y. Nakata, and N. Yokoyama
Phys. Rev. Lett. 80, 2650 – Published 23 March 1998
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Abstract

We studied the cluster size distribution of dislocation-free InAs/GaAs self-assembled quantum dots obtained by the Stranski-Krastanow mode of molecular beam epitaxy. The same scaling function was obtained over a wide range of dot density. The scaling function indicated that the cluster size fluctuation, normalized by the average size, is constant for all the quantum dot densities studied. The resemblance of the scaling function to that of the submonolayer homoepitaxial growth implies that the strain is not the essential factor determining the cluster size distribution of quantum dots.

  • Received 22 July 1997

DOI:https://doi.org/10.1103/PhysRevLett.80.2650

©1998 American Physical Society

Authors & Affiliations

Y. Ebiko, S. Muto, D. Suzuki, S. Itoh, K. Shiramine, and T. Haga

  • Department of Applied Physics, Hokkaido University, N13 W8 Kitaku, Sapporo 060 Japan

Y. Nakata and N. Yokoyama

  • Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan

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Vol. 80, Iss. 12 — 23 March 1998

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