Efficient Intersubband Scattering via Carrier-Carrier Interaction in Quantum Wells

M. Hartig, S. Haacke, P. E. Selbmann, B. Deveaud, R. A. Taylor, and L. Rota
Phys. Rev. Lett. 80, 1940 – Published 2 March 1998
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Abstract

Using femtosecond resonant luminescence, we have measured the intersubband scattering rate of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing between the first two electron subbands is smaller than the LO phonon energy, we observe that intersubband scattering is a subpicosecond process, much faster than previously measured or anticipated. Our experimental results are in perfect agreement with Monte Carlo calculations, which show that carrier-carrier interaction is responsible for the ultrafast transitions.

  • Received 12 August 1997

DOI:https://doi.org/10.1103/PhysRevLett.80.1940

©1998 American Physical Society

Authors & Affiliations

M. Hartig, S. Haacke, P. E. Selbmann, and B. Deveaud

  • Physics Department, IMO, Swiss Federal Institute of Technology, CH-1015 Lausanne, Switzerland

R. A. Taylor and L. Rota

  • Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom

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Vol. 80, Iss. 9 — 2 March 1998

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