Abstract
Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the and critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related and transitions.
- Received 28 July 1997
DOI:https://doi.org/10.1103/PhysRevLett.80.1094
©1998 American Physical Society