Strain-Induced Quenching of Optical Transitions in Capped Self-Assembled Quantum Dot Structures

J. A. Prieto, G. Armelles, T. Utzmeier, F. Briones, J. C. Ferrer, F. Peiró, A. Cornet, and J. R. Morante
Phys. Rev. Lett. 80, 1094 – Published 2 February 1998
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Abstract

Strain-induced quenching of optical transitions has been found in capped self-assembled quantum dot structures. Light absorption at the E1 and E1+Δ1 critical points of InSb islands buried in InP disappears for nominal InSb thicknesses lower than 10 monolayers as a consequence of the strain produced inside the islands by the cap layer. Certainly, this strain increases as the InSb deposition diminishes, changing the band lineup of the system from type-I to type-II and therefore drastically reducing the oscillator strengths of the island-related E1 and E1+Δ1 transitions.

  • Received 28 July 1997

DOI:https://doi.org/10.1103/PhysRevLett.80.1094

©1998 American Physical Society

Authors & Affiliations

J. A. Prieto*, G. Armelles, T. Utzmeier, and F. Briones

  • Instituto de Microelectrónica de Madrid (CNM, CSIC), Isaac Newton 8, E-28760 Tres Cantos (Madrid), Spain

J. C. Ferrer, F. Peiró, A. Cornet, and J. R. Morante

  • EME, Departamento de Física Aplicada i Electrònica, Universitat de Barcelona, Diagonal 645-647, E-08028 Barcelona, Spain

  • *Electronic address: josea@imm.cnm.csic.es

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Vol. 80, Iss. 5 — 2 February 1998

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